Special Modes
Scanning Microwave Impedance Microscopy (sMIM)
Unlock the Power of sMIM to Advance Electrical Property Analysis for Scientific Research
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What is sMIM?
Scanning Microwave Impedance Microscopy (sMIM) is an advanced technique that utilizes microwave reflections to analyze the localized electrical properties of materials with unprecedented precision. This innovative method allows researchers to study the relative permittivity and conductivity of samples with superior accuracy and sensitivity.
Key Features
High Signal-to-Noise Ratio & Sensitivity
Utilizes ~3 GHz microwave frequency to deliver high-precision measurements.
Shielded Cantilever for Accuracy
Reduces stray coupling, ensuring data reliability.
High Lateral Resolution
Provides detailed imaging of materials, ensuring accurate data acquisition.
No Electrical Contact to Sample
Requires no electrical connection to the sample, enabling the study of delicate and insulating materials.
Comprehensive Electrical Analysis
Measures dielectric constant, capacitance, resistivity, and dopant concentration.
Seamless Integration
Into Your Workflow
Into Your Workflow
Park sMIM is designed for ease of use and efficient integration into existing research workflows. With intuitive software controls, straightforward probe handling, and minimal setup requirements, researchers can quickly implement sMIM without extensive retraining or reconfiguration. The non-contact nature of sMIM also eliminates the need for specialized sample preparation, saving time and preserving sample integrity. These advantages make Park sMIM a practical choice for both dedicated and shared research environments.
Differentiation from
Alternative Methods
Alternative Methods
Unlike traditional electrical measurement techniques, sMIM does not require physical electrical contact, reducing the risk of sample contamination and damage. Its ability to analyze electrical properties at the nanoscale with high sensitivity makes it superior to conventional capacitance or resistivity measurements.
Applications
Characterization of MOSFET
Characterization of PMOS, NMOS plug
Characterization tBG on hBN without electrode
What Applications Can Be Measured?
Semiconductors
Memory Device
Dielectric Material
2D Materials